Intel Reinvents Transistors Using New 3-D Structure

Intel Corporation announces a significant breakthrough in the evolution of the transistor. For the first time since the invention of silicon transistors over 50 years ago, transistors using a three-dimensional structure will be put into high-volume manufacturing. Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed “Ivy Bridge.” A nanometer is one-billionth of a meter.

Intel’s 3-D Tri-Gate transistors enable chips to operate at lower voltage with lower leakage, providing an unprecedented combination of improved performance and energy efficiency compared to previous state-of-the-art transistors. The capabilities give chip designers the flexibility to choose transistors targeted for low power or high performance, depending on the application.

The 22nm 3-D Tri-Gate transistors provide up to 37 percent performance increase at low voltage versus Intel’s 32nm planar transistors. This incredible gain means that they are ideal for use in small handheld devices, which operate using less energy to “switch” back and forth. Alternatively, the new transistors consume less than half the power when at the same performance as 2-D planar transistors on 32nm chips.

The performance gains and power savings of Intel’s unique 3-D Tri-Gate transistors are like nothing we’ve seen before,” said Mark Bohr, Intel Senior Fellow. “This milestone is going further than simply keeping up with Moore’s Law. The low-voltage and low-power benefits far exceed what we typically see from one process generation to the next. It will give product designers the flexibility to make current devices smarter and wholly new ones possible. We believe this breakthrough will extend Intel’s lead even further over the rest of the semiconductor industry.

The 3-D Tri-Gate transistor will be implemented in the company’s upcoming manufacturing process, called the 22nm node, in reference to the size of individual transistor features. More than 6 million 22nm Tri-Gate transistors could fit in the period at the end of this sentence.

This silicon technology breakthrough will also aid in the delivery of more highly integrated Intel® Atom™ processor-based products that scale the performance, functionality and software compatibility of Intel® architecture while meeting the overall power, cost and size requirements for a range of market segment needs.

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